GC3M0032120D MOSFET Datasheet & Specifications

N-Channel TO-247-3 Logic-Level SUPSiC
Vds Max
1.2kV
Id Max
63A
Rds(on)
32mΩ@15V
Vgs(th)
2.5V

Quick Reference

The GC3M0032120D is an N-Channel MOSFET in a TO-247-3 package, manufactured by SUPSiC. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 63A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSUPSiCOriginal Manufacturer
PackageTO-247-3Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)1.2kVMax breakdown voltage
Continuous Drain Current (Id)63AMax current handling
Power Dissipation (Pd)283WMax thermal limit
On-Resistance (Rds(on))32mΩ@15VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)114nCSwitching energy
Input Capacitance (Ciss)3.357nFInternal gate capacitance
Output Capacitance (Coss)129pFInternal output capacitance
Operating Temp-40℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CI90N120SM N-Channel TO-247-3 1.2kV 90A 27mΩ@20V 2.5V
Tokmas 📄 PDF
GC3M0040120D N-Channel TO-247-3 1.2kV 66A 40mΩ@15V 2.7V
SUPSiC 📄 PDF