NTHL080N120SC1 MOSFET Datasheet & Specifications

N-Channel TO-247-3 High-Voltage onsemi
Vds Max
1.2kV
Id Max
31A
Rds(on)
110mฮฉ
Vgs(th)
4.3V

Quick Reference

The NTHL080N120SC1 is an N-Channel MOSFET in a TO-247-3 package, manufactured by onsemi. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 31A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-247-3Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)1.2kVMax breakdown voltage
Continuous Drain Current (Id)31AMax current handling
Power Dissipation (Pd)178WMax thermal limit
On-Resistance (Rds(on))110mฮฉResistance when turned fully on
Gate Threshold (Vgs(th))4.3VVoltage required to turn on
Gate Charge (Qg)56nCSwitching energy
Input Capacitance (Ciss)1.112nFInternal gate capacitance
Output Capacitance (Coss)80pFInternal output capacitance
Operating Temp-55โ„ƒ~+175โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CI90N120SM N-Channel TO-247-3 1.2kV 90A 27mฮฉ@20V 2.5V
GC3M0032120D N-Channel TO-247-3 1.2kV 63A 32mฮฉ@15V 2.5V
GC3M0040120D N-Channel TO-247-3 1.2kV 66A 40mฮฉ@15V 2.7V
GC2M0080120D1 N-Channel TO-247-3 1.2kV 34A 80mฮฉ 4V
GC2M0040120D N-Channel TO-247-3 1.2kV 55A 80mฮฉ@20V 3.2V
CI72N170SM N-Channel TO-247-3 1.7kV 72A - 4V