GC2M0080120D1 MOSFET Datasheet & Specifications
N-Channel
TO-247-3
High-Voltage
SUPSiC
Vds Max
1.2kV
Id Max
34A
Rds(on)
80mฮฉ
Vgs(th)
4V
Quick Reference
The GC2M0080120D1 is an N-Channel MOSFET in a TO-247-3 package, manufactured by SUPSiC. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 34A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SUPSiC | Original Manufacturer |
| Package | TO-247-3 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 1.2kV | Max breakdown voltage |
| Continuous Drain Current (Id) | 34A | Max current handling |
| Power Dissipation (Pd) | 190W | Max thermal limit |
| On-Resistance (Rds(on)) | 80mฮฉ | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 71nC | Switching energy |
| Input Capacitance (Ciss) | 1.13nF | Internal gate capacitance |
| Output Capacitance (Coss) | 92pF | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| CI90N120SM | N-Channel | TO-247-3 | 1.2kV | 90A | 27mฮฉ@20V | 2.5V | Tokmas ๐ PDF |
| GC3M0032120D | N-Channel | TO-247-3 | 1.2kV | 63A | 32mฮฉ@15V | 2.5V | SUPSiC ๐ PDF |
| GC3M0040120D | N-Channel | TO-247-3 | 1.2kV | 66A | 40mฮฉ@15V | 2.7V | SUPSiC ๐ PDF |
| GC2M0040120D | N-Channel | TO-247-3 | 1.2kV | 55A | 80mฮฉ@20V | 3.2V | SUPSiC ๐ PDF |
| CI72N170SM | N-Channel | TO-247-3 | 1.7kV | 72A | - | 4V | Tokmas ๐ PDF |