HYG090ND06LS1C2 MOSFET Datasheet & Specifications

N-Channel PDFN-8(5x6) Logic-Level HUAYI
Vds Max
60V
Id Max
56A
Rds(on)
14.8mΩ@4.5V
Vgs(th)
3V

Quick Reference

The HYG090ND06LS1C2 is an N-Channel MOSFET in a PDFN-8(5x6) package, manufactured by HUAYI. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 56A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerHUAYIOriginal Manufacturer
PackagePDFN-8(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)56AMax current handling
Power Dissipation (Pd)60WMax thermal limit
On-Resistance (Rds(on))14.8mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)18.5nC@10VSwitching energy
Input Capacitance (Ciss)926pFInternal gate capacitance
Output Capacitance (Coss)505pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

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