TPM60130ND56 MOSFET Datasheet & Specifications
N-Channel
PDFN-8(5x6)
Logic-Level
TECH PUBLIC
Vds Max
60V
Id Max
130A
Rds(on)
3.3mΩ@10V
Vgs(th)
2.5V
Quick Reference
The TPM60130ND56 is an N-Channel MOSFET in a PDFN-8(5x6) package, manufactured by TECH PUBLIC. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 130A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TECH PUBLIC | Original Manufacturer |
| Package | PDFN-8(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 130A | Max current handling |
| Power Dissipation (Pd) | 120W | Max thermal limit |
| On-Resistance (Rds(on)) | 3.3mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 30nC@10V | Switching energy |
| Input Capacitance (Ciss) | 5.377nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.67nF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| HYG019N06LS1C2 | N-Channel | PDFN-8(5x6) | 60V | 210A | 1.6mΩ@10V | 1.5V | HUAYI 📄 PDF |
| HYG025N06LS1C2 | N-Channel | PDFN-8(5x6) | 60V | 170A | 3.8mΩ@4.5V | 3V | HUAYI 📄 PDF |
| SDM34AG10K | N-Channel | PDFN-8(5x6) | 100V | 135A | 3.4mΩ@4.5V | 2.5V | SINEDEVICE 📄 PDF |