BSC100N10 MOSFET Datasheet & Specifications
N-Channel
PDFN-8(5x6)
Logic-Level
KTP
Vds Max
100V
Id Max
85A
Rds(on)
7.4mΩ@10V
Vgs(th)
2.5V
Quick Reference
The BSC100N10 is an N-Channel MOSFET in a PDFN-8(5x6) package, manufactured by KTP. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 85A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | KTP | Original Manufacturer |
| Package | PDFN-8(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 85A | Max current handling |
| Power Dissipation (Pd) | 105W | Max thermal limit |
| On-Resistance (Rds(on)) | 7.4mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 24nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.293nF | Internal gate capacitance |
| Output Capacitance (Coss) | 618pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SDM34AG10K | N-Channel | PDFN-8(5x6) | 100V | 135A | 3.4mΩ@4.5V | 2.5V | SINEDEVICE 📄 PDF |
| ASDM100R045NQ-R | N-Channel | PDFN-8(5x6) | 100V | 118A | 4.5mΩ@10V | 1.8V | ASDsemi 📄 PDF |
| APG077N01G | N-Channel | PDFN-8(5x6) | 100V | 90A | 7.7mΩ@10V | 3V | ALLPOWER 📄 PDF |