E100N4P0HL1 MOSFET Datasheet & Specifications

N-Channel PDFN-8(5x6) Logic-Level Existar
Vds Max
100V
Id Max
83A
Rds(on)
4mΩ@10V
Vgs(th)
2.5V

Quick Reference

The E100N4P0HL1 is an N-Channel MOSFET in a PDFN-8(5x6) package, manufactured by Existar. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 83A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerExistarOriginal Manufacturer
PackagePDFN-8(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)83AMax current handling
Power Dissipation (Pd)52WMax thermal limit
On-Resistance (Rds(on))4mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)74.2nC@10VSwitching energy
Input Capacitance (Ciss)3.841nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SDM34AG10K N-Channel PDFN-8(5x6) 100V 135A 3.4mΩ@4.5V 2.5V
SINEDEVICE 📄 PDF
ASDM100R045NQ-R N-Channel PDFN-8(5x6) 100V 118A 4.5mΩ@10V 1.8V
ASDsemi 📄 PDF
BSC100N10 N-Channel PDFN-8(5x6) 100V 85A 7.4mΩ@10V 2.5V
APG077N01G N-Channel PDFN-8(5x6) 100V 90A 7.7mΩ@10V 3V
ALLPOWER 📄 PDF