MGC068N10N MOSFET Datasheet & Specifications

N-Channel PDFN-8(5x6) High-Current Megain
Vds Max
100V
Id Max
90A
Rds(on)
6.8mΩ@10V
Vgs(th)
3.5V

Quick Reference

The MGC068N10N is an N-Channel MOSFET in a PDFN-8(5x6) package, manufactured by Megain. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 90A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerMegainOriginal Manufacturer
PackagePDFN-8(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)90AMax current handling
Power Dissipation (Pd)104WMax thermal limit
On-Resistance (Rds(on))6.8mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3.5VVoltage required to turn on
Gate Charge (Qg)33.1nC@10VSwitching energy
Input Capacitance (Ciss)2.176nFInternal gate capacitance
Output Capacitance (Coss)294pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SDM34AG10K N-Channel PDFN-8(5x6) 100V 135A 3.4mΩ@4.5V 2.5V
SINEDEVICE 📄 PDF
ASDM100R045NQ-R N-Channel PDFN-8(5x6) 100V 118A 4.5mΩ@10V 1.8V
ASDsemi 📄 PDF
APG077N01G N-Channel PDFN-8(5x6) 100V 90A 7.7mΩ@10V 3V
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