UMZ1NFHATR-HXY Transistor Datasheet & Specifications
NPN+PNP
SOT-363
General Purpose
HXY MOSFET
VCEO
50V
Ic Max
150mA
Pd Max
150mW
hFE Gain
560
Quick Reference
The UMZ1NFHATR-HXY is a NPN+PNP bipolar transistor in a SOT-363 package by HXY MOSFET. This datasheet provides complete specifications including 50V breakdown voltage and 150mA continuous collector current. Download the UMZ1NFHATR-HXY datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 150mA | Collector current |
| Pd | 150mW | Power dissipation |
| DC Current Gain | 560 | hFE / Beta |
| Frequency | 180MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| TPMMDT5551 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| HUMZ1NTR | NPN+PNP | SOT-363 | 50V | 150mA | 150mW |
| UMF28NTR | NPN+PNP | SOT-363 | 50V | 150mA | 150mW |
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMBT5451DW | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMDT5401G | NPN+PNP | SOT-363 | 150V | 200mA | 200mW |
| CMKT5078TR-HXY | NPN+PNP | SOT-363 | 50V | 150mA | 150mW |