UMF28NTR Transistor Datasheet & Specifications

NPN+PNP SOT-363 General Purpose ROHM
VCEO
50V
Ic Max
150mA
Pd Max
150mW
hFE Gain
2.1

Quick Reference

The UMF28NTR is a NPN+PNP bipolar transistor in a SOT-363 package by ROHM. This datasheet provides complete specifications including 50V breakdown voltage and 150mA continuous collector current. Download the UMF28NTR datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerROHMOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic150mACollector current
Pd150mWPower dissipation
DC Current Gain2.1hFE / Beta
Frequency140MHzTransition speed (fT)
VCEsat100mV@10mA,0.5mASaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current22kΩLeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMDT5451 NPN+PNP SOT-363 160V 200mA 200mW
TPMMDT5551 NPN+PNP SOT-363 160V 200mA 200mW
MMDT5451 NPN+PNP SOT-363 160V 200mA 200mW
HUMZ1NTR NPN+PNP SOT-363 50V 150mA 150mW
MMDT5451 NPN+PNP SOT-363 160V 200mA 200mW
MMBT5451DW NPN+PNP SOT-363 160V 200mA 200mW
MMDT5551 NPN+PNP SOT-363 160V 200mA 200mW
MMDT5401G NPN+PNP SOT-363 150V 200mA 200mW
UMZ1NFHATR-HXY NPN+PNP SOT-363 50V 150mA 150mW
CMKT5078TR-HXY NPN+PNP SOT-363 50V 150mA 150mW