MMDT5401G Transistor Datasheet & Specifications
NPN+PNP
SOT-363
General Purpose
LGE
VCEO
150V
Ic Max
200mA
Pd Max
200mW
hFE Gain
60
Quick Reference
The MMDT5401G is a NPN+PNP bipolar transistor in a SOT-363 package by LGE. This datasheet provides complete specifications including 150V breakdown voltage and 200mA continuous collector current. Download the MMDT5401G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | LGE | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 150V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 60 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| TPMMDT5551 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMBT5451DW | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |