TPMMDT5551 Transistor Datasheet & Specifications
NPN+PNP
SOT-363
General Purpose
TECH PUBLIC
VCEO
160V
Ic Max
200mA
Pd Max
200mW
hFE Gain
80
Quick Reference
The TPMMDT5551 is a NPN+PNP bipolar transistor in a SOT-363 package by TECH PUBLIC. This datasheet provides complete specifications including 160V breakdown voltage and 200mA continuous collector current. Download the TPMMDT5551 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TECH PUBLIC | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 160V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 80 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 150mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMBT5451DW | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |