HUMZ1NTR Transistor Datasheet & Specifications
NPN+PNP
SOT-363
General Purpose
HXY MOSFET
VCEO
50V
Ic Max
150mA
Pd Max
150mW
hFE Gain
560
Quick Reference
The HUMZ1NTR is a NPN+PNP bipolar transistor in a SOT-363 package by HXY MOSFET. This datasheet provides complete specifications including 50V breakdown voltage and 150mA continuous collector current. Download the HUMZ1NTR datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HXY MOSFET | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 150mA | Collector current |
| Pd | 150mW | Power dissipation |
| DC Current Gain | 560 | hFE / Beta |
| Frequency | 180MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| TPMMDT5551 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| UMF28NTR | NPN+PNP | SOT-363 | 50V | 150mA | 150mW |
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMBT5451DW | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMDT5401G | NPN+PNP | SOT-363 | 150V | 200mA | 200mW |
| UMZ1NFHATR-HXY | NPN+PNP | SOT-363 | 50V | 150mA | 150mW |
| CMKT5078TR-HXY | NPN+PNP | SOT-363 | 50V | 150mA | 150mW |