SSTA06T116-HXY Transistor Datasheet & Specifications

NPN SOT-23 General Purpose HXY MOSFET
VCEO
80V
Ic Max
500mA
Pd Max
300mW
hFE Gain
400

Quick Reference

The SSTA06T116-HXY is a NPN bipolar transistor in a SOT-23 package by HXY MOSFET. This datasheet provides complete specifications including 80V breakdown voltage and 500mA continuous collector current. Download the SSTA06T116-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic500mACollector current
Pd300mWPower dissipation
DC Current Gain400hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat250mVSaturation voltage
Vebo4VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
DN350T05-7 NPN SOT-23 350V 500mA 300mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
FMMT415TD NPN SOT-23 100V 500mA 500mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 300mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
MMBT5551 NPN SOT-23 160V 600mA 300mW
ZXTN25100DFHTA NPN SOT-23 100V 2.5A 1.25W
MMBTA06-7-F NPN SOT-23 80V 500mA 350mW
NSS1C201LT1G NPN SOT-23 100V 2A 710mW