ZXTN25100DFHTA Transistor Datasheet & Specifications
NPN
SOT-23
General Purpose
DIODES
VCEO
100V
Ic Max
2.5A
Pd Max
1.25W
hFE Gain
300
Quick Reference
The ZXTN25100DFHTA is a NPN bipolar transistor in a SOT-23 package by DIODES. This datasheet provides complete specifications including 100V breakdown voltage and 2.5A continuous collector current. Download the ZXTN25100DFHTA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 2.5A | Collector current |
| Pd | 1.25W | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 175MHz | Transition speed (fT) |
| VCEsat | 95mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ZXTN2020FTA | NPN | SOT-23 | 100V | 4A | 1.2W |
| MMBT5550LT3G | NPN | SOT-23 | 140V | 600nA | 225mW |
| ZXTN25100BFHTA | NPN | SOT-23 | 100V | 3A | 1.25W |