MMBT5550LT3G Transistor Datasheet & Specifications
NPN
SOT-23
General Purpose
onsemi
VCEO
140V
Ic Max
600nA
Pd Max
225mW
hFE Gain
60
Quick Reference
The MMBT5550LT3G is a NPN bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 140V breakdown voltage and 600nA continuous collector current. Download the MMBT5550LT3G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 140V | Breakdown voltage |
| Ic | 600nA | Collector current |
| Pd | 225mW | Power dissipation |
| DC Current Gain | 60 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 150mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |