ZXTN2020FTA Transistor Datasheet & Specifications
NPN
SOT-23
General Purpose
DIODES
VCEO
100V
Ic Max
4A
Pd Max
1.2W
hFE Gain
100
Quick Reference
The ZXTN2020FTA is a NPN bipolar transistor in a SOT-23 package by DIODES. This datasheet provides complete specifications including 100V breakdown voltage and 4A continuous collector current. Download the ZXTN2020FTA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 4A | Collector current |
| Pd | 1.2W | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 130MHz | Transition speed (fT) |
| VCEsat | 50mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 20nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMBT5550LT3G | NPN | SOT-23 | 140V | 600nA | 225mW |