DN350T05-7 Transistor Datasheet & Specifications
NPN
SOT-23
General Purpose
DIODES
VCEO
350V
Ic Max
500mA
Pd Max
300mW
hFE Gain
30
Quick Reference
The DN350T05-7 is a NPN bipolar transistor in a SOT-23 package by DIODES. This datasheet provides complete specifications including 350V breakdown voltage and 500mA continuous collector current. Download the DN350T05-7 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 350V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 300mW | Power dissipation |
| DC Current Gain | 30 | hFE / Beta |
| Frequency | 50MHz | Transition speed (fT) |
| VCEsat | 300mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| CMPTA42E TR PBFREE | NPN | SOT-23 | 350V | 500mA | 350mW |