FMMT415TD Transistor Datasheet & Specifications

NPN SOT-23 General Purpose DIODES
VCEO
100V
Ic Max
500mA
Pd Max
500mW
hFE Gain
25

Quick Reference

The FMMT415TD is a NPN bipolar transistor in a SOT-23 package by DIODES. This datasheet provides complete specifications including 100V breakdown voltage and 500mA continuous collector current. Download the FMMT415TD datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic500mACollector current
Pd500mWPower dissipation
DC Current Gain25hFE / Beta
Frequency40MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current10uALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
DN350T05-7 NPN SOT-23 350V 500mA 300mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 300mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
MMBT5551 NPN SOT-23 160V 600mA 300mW
ZXTN25100DFHTA NPN SOT-23 100V 2.5A 1.25W
NSS1C201LT1G NPN SOT-23 100V 2A 710mW
SMMBTA42LT1G NPN SOT-23 300V 500mA 225mW
SMMBTA42LT3G NPN SOT-23 300V 500mA 225mW