SMMBTA42LT1G Transistor Datasheet & Specifications

NPN SOT-23 General Purpose onsemi
VCEO
300V
Ic Max
500mA
Pd Max
225mW
hFE Gain
25

Quick Reference

The SMMBTA42LT1G is a NPN bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 300V breakdown voltage and 500mA continuous collector current. Download the SMMBTA42LT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO300VBreakdown voltage
Ic500mACollector current
Pd225mWPower dissipation
DC Current Gain25hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
DN350T05-7 NPN SOT-23 350V 500mA 300mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 300mW
SMMBTA42LT3G NPN SOT-23 300V 500mA 225mW
MMBTA42-7-F NPN SOT-23 300V 500mA 300mW
S-MMBTA42LT1G NPN SOT-23 300V 500mA 350mW
MMBTA42 NPN SOT-23 300V 500mA 350mW
FMMT497TA NPN SOT-23 300V 500mA 500mW
LMBTA42LT1G NPN SOT-23 300V 500mA 225mW
MMBTA42 NPN SOT-23 300V 500mA 300mW
MMBTA42 NPN SOT-23 300V 500mA 350mW