S-MMBTA42LT1G Transistor Datasheet & Specifications

NPN SOT-23 General Purpose JSMSEMI
VCEO
300V
Ic Max
500mA
Pd Max
350mW
hFE Gain
60

Quick Reference

The S-MMBTA42LT1G is a NPN bipolar transistor in a SOT-23 package by JSMSEMI. This datasheet provides complete specifications including 300V breakdown voltage and 500mA continuous collector current. Download the S-MMBTA42LT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSMSEMIOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO300VBreakdown voltage
Ic500mACollector current
Pd350mWPower dissipation
DC Current Gain60hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat200mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
DN350T05-7 NPN SOT-23 350V 500mA 300mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 300mW
SMMBTA42LT1G NPN SOT-23 300V 500mA 225mW
SMMBTA42LT3G NPN SOT-23 300V 500mA 225mW
MMBTA42-7-F NPN SOT-23 300V 500mA 300mW
MMBTA42 NPN SOT-23 300V 500mA 350mW
FMMT497TA NPN SOT-23 300V 500mA 500mW
LMBTA42LT1G NPN SOT-23 300V 500mA 225mW
MMBTA42 NPN SOT-23 300V 500mA 300mW
MMBTA42 NPN SOT-23 300V 500mA 350mW