PZT651T1G Transistor Datasheet & Specifications

NPN SOT-223 General Purpose onsemi
VCEO
60V
Ic Max
2A
Pd Max
800mW
hFE Gain
75

Quick Reference

The PZT651T1G is a NPN bipolar transistor in a SOT-223 package by onsemi. This datasheet provides complete specifications including 60V breakdown voltage and 2A continuous collector current. Download the PZT651T1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic2ACollector current
Pd800mWPower dissipation
DC Current Gain75hFE / Beta
Frequency75MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FZT857TA NPN SOT-223 300V 3.5A 3W
ZX5T851GTA NPN SOT-223 60V 6A 1.6W
STN851 NPN SOT-223 60V 5A 1.6W
FZT855TA NPN SOT-223 150V 5A 3W
FZT653TA NPN SOT-223 100V 2A 3W
FZT692BTA NPN SOT-223 70V 2A 3W
FZT853TA NPN SOT-223 100V 6A 3W
2STN1360 NPN SOT-223 60V 3A 1.6W
PBSS306NZ,135 NPN SOT-223 100V 5.1A 1.7W
FZT651TA NPN SOT-223 60V 3A 3W