MMUN5335DW Transistor Datasheet & Specifications
NPN+PNP
SOT-363
General Purpose
YFW
VCEO
50V
Ic Max
100mA
Pd Max
385mW
hFE Gain
0.047
Quick Reference
The MMUN5335DW is a NPN+PNP bipolar transistor in a SOT-363 package by YFW. This datasheet provides complete specifications including 50V breakdown voltage and 100mA continuous collector current. Download the MMUN5335DW datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | YFW | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 385mW | Power dissipation |
| DC Current Gain | 0.047 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 200mV | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 2.2kΩ | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| TPMMDT5551 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| HUMZ1NTR | NPN+PNP | SOT-363 | 50V | 150mA | 150mW |
| UMF28NTR | NPN+PNP | SOT-363 | 50V | 150mA | 150mW |
| MMDT5451 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMBT5451DW | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMDT5551 | NPN+PNP | SOT-363 | 160V | 200mA | 200mW |
| MMDT5401G | NPN+PNP | SOT-363 | 150V | 200mA | 200mW |
| MMDTX441DW | NPN+PNP | SOT-363 | 50V | 100mA | 200mW |