MMBTA06LT3G Transistor Datasheet & Specifications

NPN SOT-23 General Purpose onsemi
VCEO
80V
Ic Max
500mA
Pd Max
225mW
hFE Gain
100

Quick Reference

The MMBTA06LT3G is a NPN bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 80V breakdown voltage and 500mA continuous collector current. Download the MMBTA06LT3G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic500mACollector current
Pd225mWPower dissipation
DC Current Gain100hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat250mVSaturation voltage
Vebo4VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
DN350T05-7 NPN SOT-23 350V 500mA 300mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
FMMT415TD NPN SOT-23 100V 500mA 500mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 300mW
MMBT5551 NPN SOT-23 160V 600mA 250mW
MMBT5551 NPN SOT-23 160V 600mA 300mW
ZXTN25100DFHTA NPN SOT-23 100V 2.5A 1.25W
MMBTA06-7-F NPN SOT-23 80V 500mA 350mW
NSS1C201LT1G NPN SOT-23 100V 2A 710mW