MMBT8099LT1G Transistor Datasheet & Specifications
NPN
SOT-23
General Purpose
onsemi
VCEO
80V
Ic Max
500mA
Pd Max
225mW
hFE Gain
100
Quick Reference
The MMBT8099LT1G is a NPN bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 80V breakdown voltage and 500mA continuous collector current. Download the MMBT8099LT1G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 80V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 225mW | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 150MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ZXTN2020FTA | NPN | SOT-23 | 100V | 4A | 1.2W |
| DN350T05-7 | NPN | SOT-23 | 350V | 500mA | 300mW |
| MMBTA42 | NPN | SOT-23 | 200V | 500mA | 350mW |
| FMMT415TD | NPN | SOT-23 | 100V | 500mA | 500mW |
| MMBTA42Q-7-F | NPN | SOT-23 | 300V | 500mA | 300mW |
| MMBT5551 | NPN | SOT-23 | 160V | 600mA | 250mW |
| MMBT5551 | NPN | SOT-23 | 160V | 600mA | 300mW |
| ZXTN25100DFHTA | NPN | SOT-23 | 100V | 2.5A | 1.25W |
| MMBTA06-7-F | NPN | SOT-23 | 80V | 500mA | 350mW |
| NSS1C201LT1G | NPN | SOT-23 | 100V | 2A | 710mW |