FZT605 Transistor Datasheet & Specifications

NPN SOT-223 High Power DIODES
VCEO
120V
Ic Max
1.5A
Pd Max
3W
hFE Gain
2000

Quick Reference

The FZT605 is a NPN bipolar transistor in a SOT-223 package by DIODES. This datasheet provides complete specifications including 120V breakdown voltage and 1.5A continuous collector current. Download the FZT605 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO120VBreakdown voltage
Ic1.5ACollector current
Pd3WPower dissipation
DC Current Gain2000hFE / Beta
Frequency150MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FZT857TA NPN SOT-223 300V 3.5A 3W
FZT855TA NPN SOT-223 150V 5A 3W
DXT13003DG-13 NPN SOT-223 450V 1.5A 3W
STN83003 NPN SOT-223 400V 1.5A 1.6W
FZT605TA NPN SOT-223 120V 1.5A 2W
5302DG-AA3-R NPN SOT-223 400V 2A 1W
FZT600TA NPN SOT-223 140V 2A 2W