DXT13003DG-13 Transistor Datasheet & Specifications

NPN SOT-223 High Power DIODES
VCEO
450V
Ic Max
1.5A
Pd Max
3W
hFE Gain
16
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Quick Reference

The DXT13003DG-13 is a NPN bipolar transistor in a SOT-223 package by DIODES. This datasheet provides complete specifications including 450V breakdown voltage and 1.5A continuous collector current. Download the DXT13003DG-13 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO450VBreakdown voltage
Ic1.5ACollector current
Pd3WPower dissipation
DC Current Gain16hFE / Beta
Frequency4MHzTransition speed (fT)
VCEsat400mVSaturation voltage
Vebo9VEmitter-Base voltage
Cutoff Current10uALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all SOT-223 NPN Transistors ›