BC847PN Transistor Datasheet & Specifications

NPN+PNP SOT-363 General Purpose CBI
VCEO
45V
Ic Max
100mA
Pd Max
200mW
hFE Gain
200

Quick Reference

The BC847PN is a NPN+PNP bipolar transistor in a SOT-363 package by CBI. This datasheet provides complete specifications including 45V breakdown voltage and 100mA continuous collector current. Download the BC847PN datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerCBIOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO45VBreakdown voltage
Ic100mACollector current
Pd200mWPower dissipation
DC Current Gain200hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat600mVSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current15nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMDT5451 NPN+PNP SOT-363 160V 200mA 200mW
TPMMDT5551 NPN+PNP SOT-363 160V 200mA 200mW
MMDT5451 NPN+PNP SOT-363 160V 200mA 200mW
HUMZ1NTR NPN+PNP SOT-363 50V 150mA 150mW
BC847PN NPN+PNP SOT-363 45V 100mA 200mW
UMF28NTR NPN+PNP SOT-363 50V 150mA 150mW
BC847PN NPN+PNP SOT-363 45V 100mA 200mW
MMDT5451 NPN+PNP SOT-363 160V 200mA 200mW
MMBT5451DW NPN+PNP SOT-363 160V 200mA 200mW
MMUN5335DW NPN+PNP SOT-363 50V 100mA 385mW