B772 B772 Transistor Datasheet & Specifications

PNP SOT-89 High Power LGE
VCEO
30V
Ic Max
3A
Pd Max
500mW
hFE Gain
230

Quick Reference

The B772 B772 is a PNP bipolar transistor in a SOT-89 package by LGE. This datasheet provides complete specifications including 30V breakdown voltage and 3A continuous collector current. Download the B772 B772 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerLGEOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic3ACollector current
Pd500mWPower dissipation
DC Current Gain230hFE / Beta
Frequency80MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTP2012ZTA PNP SOT-89 60V 4.3A 1.5W
2STF2360 PNP SOT-89 60V 3A 1.4W
ZXTP2008ZTA PNP SOT-89 30V 5.5A 12W
ZX5T3ZTA PNP SOT-89 40V 5.5A 3W
FCX1151ATA PNP SOT-89 40V 3A 2W
DPLS350Y-13 PNP SOT-89 50V 3A 2W
PBSS5350X,115 PNP SOT-89 50V 3A 1.4W
DSS5540X-13 PNP SOT-89 40V 4A 900mW
PBSS4041PX,115 PNP SOT-89 60V 5A 2.5W
ZXTP25040DZTA PNP SOT-89 40V 3A 1.1W