2SD2391 Transistor Datasheet & Specifications

NPN SOT-89 General Purpose R+O
VCEO
60V
Ic Max
2A
Pd Max
500mW
hFE Gain
390

Quick Reference

The 2SD2391 is a NPN bipolar transistor in a SOT-89 package by R+O. This datasheet provides complete specifications including 60V breakdown voltage and 2A continuous collector current. Download the 2SD2391 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic2ACollector current
Pd500mWPower dissipation
DC Current Gain390hFE / Beta
Frequency210MHzTransition speed (fT)
VCEsat350mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+155โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2010ZTA NPN SOT-89 60V 5A 2.1W
2SC5824T100R NPN SOT-89 60V 3A 2W
2STF1360 NPN SOT-89 60V 3A 1.4W
ZXTN2011ZTA NPN SOT-89 100V 4.5A 2.1W
DXTN26070CY-13 NPN SOT-89 70V 2A 2W
2SC554SQ NPN SOT-89 100V 2A 500mW
D882H-JSM NPN SOT-89 70V 3A 500mW
DXT651Q-13 NPN SOT-89 60V 3A 2W
PBSS304 NPN SOT-89 60V 5A 2.1W