ZXTN2011ZTA Transistor Datasheet & Specifications
NPN
SOT-89
High Power
DIODES
VCEO
100V
Ic Max
4.5A
Pd Max
2.1W
hFE Gain
100
Quick Reference
The ZXTN2011ZTA is a NPN bipolar transistor in a SOT-89 package by DIODES. This datasheet provides complete specifications including 100V breakdown voltage and 4.5A continuous collector current. Download the ZXTN2011ZTA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 4.5A | Collector current |
| Pd | 2.1W | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 130MHz | Transition speed (fT) |
| VCEsat | 115mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 500nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |