D882H-JSM Transistor Datasheet & Specifications
NPN
SOT-89
General Purpose
JSMSEMI
VCEO
70V
Ic Max
3A
Pd Max
500mW
hFE Gain
400
Quick Reference
The D882H-JSM is a NPN bipolar transistor in a SOT-89 package by JSMSEMI. This datasheet provides complete specifications including 70V breakdown voltage and 3A continuous collector current. Download the D882H-JSM datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 70V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 500mW | Power dissipation |
| DC Current Gain | 400 | hFE / Beta |
| Frequency | 50MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| ZXTN2011ZTA | NPN | SOT-89 | 100V | 4.5A | 2.1W |