DXT651Q-13 Transistor Datasheet & Specifications

NPN SOT-89 General Purpose DIODES
VCEO
60V
Ic Max
3A
Pd Max
2W
hFE Gain
300

Quick Reference

The DXT651Q-13 is a NPN bipolar transistor in a SOT-89 package by DIODES. This datasheet provides complete specifications including 60V breakdown voltage and 3A continuous collector current. Download the DXT651Q-13 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic3ACollector current
Pd2WPower dissipation
DC Current Gain300hFE / Beta
Frequency200MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2010ZTA NPN SOT-89 60V 5A 2.1W
2SC5824T100R NPN SOT-89 60V 3A 2W
2STF1360 NPN SOT-89 60V 3A 1.4W
ZXTN2011ZTA NPN SOT-89 100V 4.5A 2.1W
D882H-JSM NPN SOT-89 70V 3A 500mW
PBSS304 NPN SOT-89 60V 5A 2.1W