ZXTN2010ZTA Transistor Datasheet & Specifications
NPN
SOT-89
High Power
DIODES
VCEO
60V
Ic Max
5A
Pd Max
2.1W
hFE Gain
55
Quick Reference
The ZXTN2010ZTA is a NPN bipolar transistor in a SOT-89 package by DIODES. This datasheet provides complete specifications including 60V breakdown voltage and 5A continuous collector current. Download the ZXTN2010ZTA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 5A | Collector current |
| Pd | 2.1W | Power dissipation |
| DC Current Gain | 55 | hFE / Beta |
| Frequency | 130MHz | Transition speed (fT) |
| VCEsat | 65mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| PBSS304 | NPN | SOT-89 | 60V | 5A | 2.1W |