2SD211 Transistor Datasheet & Specifications

NPN TO-3 High Power SPTECH
VCEO
60V
Ic Max
10A
Pd Max
100W
hFE Gain
30

Quick Reference

The 2SD211 is a NPN bipolar transistor in a TO-3 package by SPTECH. This datasheet provides complete specifications including 60V breakdown voltage and 10A continuous collector current. Download the 2SD211 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic10ACollector current
Pd100WPower dissipation
DC Current Gain30hFE / Beta
Frequency8MHzTransition speed (fT)
VCEsat1.5VSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MJ15015G NPN TO-3 120V 15A 180W
MJ15024 NPN TO-3 250V 16A 250W
MJ3055 NPN TO-3 60V 10A 117W
2N3772 NPN TO-3 60V 20A 150W
BDY58 NPN TO-3 125V 25A 175W
2N5631 NPN TO-3 140V 16A 200W
BD317 NPN TO-3 100V 16A 200W
2N5302 NPN TO-3 60V 30A 200W
MJ15026 NPN TO-3 200V 16A 250W
2N5685 NPN TO-3 60V 50A 300W