MJ3055 Transistor Datasheet & Specifications
NPN
TO-3
High Power
SPTECH
VCEO
60V
Ic Max
10A
Pd Max
117W
hFE Gain
70
Quick Reference
The MJ3055 is a NPN bipolar transistor in a TO-3 package by SPTECH. This datasheet provides complete specifications including 60V breakdown voltage and 10A continuous collector current. Download the MJ3055 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 10A | Collector current |
| Pd | 117W | Power dissipation |
| DC Current Gain | 70 | hFE / Beta |
| Frequency | 2MHz | Transition speed (fT) |
| VCEsat | 3V | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 1mA | Leakage (ICBO) |
| Temp | -55℃~+200℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJ15015G | NPN | TO-3 | 120V | 15A | 180W |
| MJ15024 | NPN | TO-3 | 250V | 16A | 250W |
| 2N3772 | NPN | TO-3 | 60V | 20A | 150W |
| BDY58 | NPN | TO-3 | 125V | 25A | 175W |
| 2N5631 | NPN | TO-3 | 140V | 16A | 200W |
| BD317 | NPN | TO-3 | 100V | 16A | 200W |
| 2N5302 | NPN | TO-3 | 60V | 30A | 200W |
| MJ15026 | NPN | TO-3 | 200V | 16A | 250W |
| 2N5685 | NPN | TO-3 | 60V | 50A | 300W |
| 2N3055A | NPN | TO-3 | 60V | 15A | 115W |