BDY58 Transistor Datasheet & Specifications
NPN
TO-3
High Power
SPTECH
VCEO
125V
Ic Max
25A
Pd Max
175W
hFE Gain
60
Quick Reference
The BDY58 is a NPN bipolar transistor in a TO-3 package by SPTECH. This datasheet provides complete specifications including 125V breakdown voltage and 25A continuous collector current. Download the BDY58 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 125V | Breakdown voltage |
| Ic | 25A | Collector current |
| Pd | 175W | Power dissipation |
| DC Current Gain | 60 | hFE / Beta |
| Frequency | 10MHz | Transition speed (fT) |
| VCEsat | 1.4V | Saturation voltage |
| Vebo | 10V | Emitter-Base voltage |
| Cutoff Current | 500uA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| 2SC3058 | NPN | TO-3 | 400V | 30A | 200W |