BD317 Transistor Datasheet & Specifications

NPN TO-3 High Power SPTECH
VCEO
100V
Ic Max
16A
Pd Max
200W
hFE Gain
25

Quick Reference

The BD317 is a NPN bipolar transistor in a TO-3 package by SPTECH. This datasheet provides complete specifications including 100V breakdown voltage and 16A continuous collector current. Download the BD317 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic16ACollector current
Pd200WPower dissipation
DC Current Gain25hFE / Beta
Frequency1MHzTransition speed (fT)
VCEsat1VSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current1mALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MJ15024 NPN TO-3 250V 16A 250W
BDY58 NPN TO-3 125V 25A 175W
2N5631 NPN TO-3 140V 16A 200W
MJ15026 NPN TO-3 200V 16A 250W
2SC3058 NPN TO-3 400V 30A 200W
2N6338 NPN TO-3 100V 25A 200W
MJ21194 NPN TO-3 250V 16A 250W
MJ11032 NPN TO-3 120V 50A 300W
MJ11016 NPN TO-3 120V 30A 200W
2KW8629 NPN TO-3 500V 20A 150W