MJ11016 Transistor Datasheet & Specifications
NPN
TO-3
High Power
SPTECH
VCEO
120V
Ic Max
30A
Pd Max
200W
hFE Gain
1000
Quick Reference
The MJ11016 is a NPN bipolar transistor in a TO-3 package by SPTECH. This datasheet provides complete specifications including 120V breakdown voltage and 30A continuous collector current. Download the MJ11016 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 120V | Breakdown voltage |
| Ic | 30A | Collector current |
| Pd | 200W | Power dissipation |
| DC Current Gain | 1000 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 4V | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 5mA | Leakage (ICBO) |
| Temp | -55℃~+200℃ | Operating temp |