2N5631 Transistor Datasheet & Specifications
NPN
TO-3
High Power
SPTECH
VCEO
140V
Ic Max
16A
Pd Max
200W
hFE Gain
60
Quick Reference
The 2N5631 is a NPN bipolar transistor in a TO-3 package by SPTECH. This datasheet provides complete specifications including 140V breakdown voltage and 16A continuous collector current. Download the 2N5631 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 140V | Breakdown voltage |
| Ic | 16A | Collector current |
| Pd | 200W | Power dissipation |
| DC Current Gain | 60 | hFE / Beta |
| Frequency | 1MHz | Transition speed (fT) |
| VCEsat | 2V | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 2mA | Leakage (ICBO) |
| Temp | - | Operating temp |