2SB772-P Transistor Datasheet & Specifications

PNP SOT-89 General Purpose YFW
VCEO
30V
Ic Max
3A
Pd Max
500mW
hFE Gain
320

Quick Reference

The 2SB772-P is a PNP bipolar transistor in a SOT-89 package by YFW. This datasheet provides complete specifications including 30V breakdown voltage and 3A continuous collector current. Download the 2SB772-P datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYFWOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic3ACollector current
Pd500mWPower dissipation
DC Current Gain320hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTP2012ZTA PNP SOT-89 60V 4.3A 1.5W
2STF2360 PNP SOT-89 60V 3A 1.4W
ZXTP2008ZTA PNP SOT-89 30V 5.5A 12W
ZX5T3ZTA PNP SOT-89 40V 5.5A 3W
FCX1151ATA PNP SOT-89 40V 3A 2W
DPLS350Y-13 PNP SOT-89 50V 3A 2W
PBSS5350X,115 PNP SOT-89 50V 3A 1.4W
DSS5540X-13 PNP SOT-89 40V 4A 900mW
PBSS4041PX,115 PNP SOT-89 60V 5A 2.5W
ZXTP25040DZTA PNP SOT-89 40V 3A 1.1W