2DB1188R-13 Transistor Datasheet & Specifications

PNP SOT-89 General Purpose DIODES
VCEO
32V
Ic Max
2A
Pd Max
1W
hFE Gain
180

Quick Reference

The 2DB1188R-13 is a PNP bipolar transistor in a SOT-89 package by DIODES. This datasheet provides complete specifications including 32V breakdown voltage and 2A continuous collector current. Download the 2DB1188R-13 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO32VBreakdown voltage
Ic2ACollector current
Pd1WPower dissipation
DC Current Gain180hFE / Beta
Frequency120MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTP2012ZTA PNP SOT-89 60V 4.3A 1.5W
2STF2360 PNP SOT-89 60V 3A 1.4W
ZX5T3ZTA PNP SOT-89 40V 5.5A 3W
FCX1151ATA PNP SOT-89 40V 3A 2W
DPLS350Y-13 PNP SOT-89 50V 3A 2W
PBSS5350X,115 PNP SOT-89 50V 3A 1.4W
DSS5540X-13 PNP SOT-89 40V 4A 900mW
PBSS4041PX,115 PNP SOT-89 60V 5A 2.5W
PBSS5250X-HXY PNP SOT-89 50V 2A 500mW
2SA1213 PNP SOT-89 50V 2A 500mW