PBSS5250X-HXY Transistor Datasheet & Specifications

PNP SOT-89 General Purpose HXY MOSFET
VCEO
50V
Ic Max
2A
Pd Max
500mW
hFE Gain
240

Quick Reference

The PBSS5250X-HXY is a PNP bipolar transistor in a SOT-89 package by HXY MOSFET. This datasheet provides complete specifications including 50V breakdown voltage and 2A continuous collector current. Download the PBSS5250X-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic2ACollector current
Pd500mWPower dissipation
DC Current Gain240hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTP2012ZTA PNP SOT-89 60V 4.3A 1.5W
2STF2360 PNP SOT-89 60V 3A 1.4W
DPLS350Y-13 PNP SOT-89 50V 3A 2W
PBSS5350X,115 PNP SOT-89 50V 3A 1.4W
PBSS4041PX,115 PNP SOT-89 60V 5A 2.5W
2SA1213 PNP SOT-89 50V 2A 500mW
2SA2016-TD-E PNP SOT-89 50V 7A 3.5W
2DA1797Q-13 PNP SOT-89 50V 3A 900mW
2SA1797-Q PNP SOT-89 50V 2A 500mW
2SB1123T-TD-E PNP SOT-89 50V 2A 500mW