2SB1123T-TD-E Transistor Datasheet & Specifications

PNP SOT-89 General Purpose onsemi
VCEO
50V
Ic Max
2A
Pd Max
500mW
hFE Gain
200

Quick Reference

The 2SB1123T-TD-E is a PNP bipolar transistor in a SOT-89 package by onsemi. This datasheet provides complete specifications including 50V breakdown voltage and 2A continuous collector current. Download the 2SB1123T-TD-E datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic2ACollector current
Pd500mWPower dissipation
DC Current Gain200hFE / Beta
Frequency150MHzTransition speed (fT)
VCEsat400mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTP2012ZTA PNP SOT-89 60V 4.3A 1.5W
2STF2360 PNP SOT-89 60V 3A 1.4W
DPLS350Y-13 PNP SOT-89 50V 3A 2W
PBSS5350X,115 PNP SOT-89 50V 3A 1.4W
PBSS4041PX,115 PNP SOT-89 60V 5A 2.5W
PBSS5250X-HXY PNP SOT-89 50V 2A 500mW
2SA1213 PNP SOT-89 50V 2A 500mW
2SA2016-TD-E PNP SOT-89 50V 7A 3.5W
2DA1797Q-13 PNP SOT-89 50V 3A 900mW
2SA1797-Q PNP SOT-89 50V 2A 500mW