2DB1182Q-13 Transistor Datasheet & Specifications
PNP
TO-252
General Purpose
DIODES
VCEO
32V
Ic Max
2A
Pd Max
1.2W
hFE Gain
120
Quick Reference
The 2DB1182Q-13 is a PNP bipolar transistor in a TO-252 package by DIODES. This datasheet provides complete specifications including 32V breakdown voltage and 2A continuous collector current. Download the 2DB1182Q-13 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 32V | Breakdown voltage |
| Ic | 2A | Collector current |
| Pd | 1.2W | Power dissipation |
| DC Current Gain | 120 | hFE / Beta |
| Frequency | 110MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD42CRLG | PNP | TO-252 | 100V | 6A | 1.75W |
| MJD42CT4G(MS) | PNP | TO-252 | 100V | 6A | 1.25W |
| MJD42C | PNP | TO-252 | 100V | 6A | 20W |
| BRMJE172D | PNP | TO-252 | 80V | 6A | 12.5W |
| MJD127T4G(MS) | PNP | TO-252 | 100V | 8A | 1.5W |
| MJD127T4G-JSM | PNP | TO-252 | 100V | 8A | 1.75W |
| MJD127 | PNP | TO-252 | 100V | 5A | 65W |
| MJD45H11 | PNP | TO-252 | 80V | 8A | 20W |
| 2SB1201S-TL-E | PNP | TO-252 | 50V | 2A | 800mW |