MJD127 Transistor Datasheet & Specifications
PNP
TO-252
High Power
Minos
VCEO
100V
Ic Max
5A
Pd Max
65W
hFE Gain
1000
Quick Reference
The MJD127 is a PNP bipolar transistor in a TO-252 package by Minos. This datasheet provides complete specifications including 100V breakdown voltage and 5A continuous collector current. Download the MJD127 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Minos | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 5A | Collector current |
| Pd | 65W | Power dissipation |
| DC Current Gain | 1000 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 2V | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 200uA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD42CRLG | PNP | TO-252 | 100V | 6A | 1.75W |
| MJD42CT4G(MS) | PNP | TO-252 | 100V | 6A | 1.25W |
| MJD42C | PNP | TO-252 | 100V | 6A | 20W |
| MJD127T4G(MS) | PNP | TO-252 | 100V | 8A | 1.5W |
| MJD127T4G-JSM | PNP | TO-252 | 100V | 8A | 1.75W |