MJD127T4G-JSM Transistor Datasheet & Specifications
PNP
TO-252
General Purpose
JSMSEMI
VCEO
100V
Ic Max
8A
Pd Max
1.75W
hFE Gain
1000
Quick Reference
The MJD127T4G-JSM is a PNP bipolar transistor in a TO-252 package by JSMSEMI. This datasheet provides complete specifications including 100V breakdown voltage and 8A continuous collector current. Download the MJD127T4G-JSM datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 1.75W | Power dissipation |
| DC Current Gain | 1000 | hFE / Beta |
| Frequency | 4MHz | Transition speed (fT) |
| VCEsat | 4V@8A,80mA | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 10uA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD127T4G(MS) | PNP | TO-252 | 100V | 8A | 1.5W |