MJD127T4G(MS) Transistor Datasheet & Specifications
PNP
TO-252
General Purpose
MSKSEMI
VCEO
100V
Ic Max
8A
Pd Max
1.5W
hFE Gain
12000
Quick Reference
The MJD127T4G(MS) is a PNP bipolar transistor in a TO-252 package by MSKSEMI. This datasheet provides complete specifications including 100V breakdown voltage and 8A continuous collector current. Download the MJD127T4G(MS) datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MSKSEMI | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 1.5W | Power dissipation |
| DC Current Gain | 12000 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 4V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 10uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD127T4G-JSM | PNP | TO-252 | 100V | 8A | 1.75W |