MJD45H11 Transistor Datasheet & Specifications
PNP
TO-252
High Power
GOODWORK
VCEO
80V
Ic Max
8A
Pd Max
20W
hFE Gain
60
Quick Reference
The MJD45H11 is a PNP bipolar transistor in a TO-252 package by GOODWORK. This datasheet provides complete specifications including 80V breakdown voltage and 8A continuous collector current. Download the MJD45H11 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | GOODWORK | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 80V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 20W | Power dissipation |
| DC Current Gain | 60 | hFE / Beta |
| Frequency | 50MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD127T4G(MS) | PNP | TO-252 | 100V | 8A | 1.5W |
| MJD127T4G-JSM | PNP | TO-252 | 100V | 8A | 1.75W |