ZXT11N20DFTA Datasheet & Equivalents

NPN SOT-23 General Purpose DIODES
VCEO
20V
Ic Max
2.5A
Pd Max
625mW
hFE Gain
200

Quick Reference

The ZXT11N20DFTA is a NPN bipolar junction transistor in a SOT-23 package, manufactured by DIODES. It supports a breakdown voltage of 20V and continuous collector current of 2.5A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)20VMax breakdown voltage
Collector Current (Ic)2.5AMax current handling
Power Dissipation (Pd)625mWMax thermal limit
DC Current Gain (hFE)200Base signal amplification ratio
Transition Frequency (fT)160MHzMax operating frequency
Saturation Voltage (VCEsat)7mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)7.5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
FMMT618QTA NPN SOT-23 20V 2.5A 200 625mW
FMMT618TA NPN SOT-23 20V 2.5A 200 625mW
FMMT618 NPN SOT-23 20V 2.5A 200 350mW
FMMT618-JSM NPN SOT-23 20V 2.5A 300 350mW
FMMT618-TP NPN SOT-23 20V 2.5A 300 350mW
HFMMT618TA NPN SOT-23 20V 2.5A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
PBSS4320T-HXY NPN SOT-23 20V 2.5A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT618 NPN SOT-23 20V 2.5A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
ZXTN25020BFHTA NPN SOT-23 20V 4.5A 100 1.25W
ZXTN25020DFHTA NPN SOT-23 20V 4.5A 300 1.25W
D965 NPN SOT-23 22V 5A 600 350mW
HT(Shenzhen J... ๐Ÿ“„ PDF
D882SSG-P-AE3-R NPN SOT-23 30V 3A 160 10W
D882S NPN SOT-23 30V 3A 30 1W
ZXTN25040DFHTA NPN SOT-23 40V 4A 300 1.25W
ZXTN25050DFHTA NPN SOT-23 50V 4A 300 1.25W
ZXTN2031FTA NPN SOT-23 50V 5A 200 1.2W